ZXTS1000E6TC
Diodes Incorporated
Diodes Incorporated
TRANS PNP 12V 1.25A SOT23-6
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Experience unmatched performance with the ZXTS1000E6TC Bipolar Junction Transistor (BJT) by Diodes Incorporated. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the ZXTS1000E6TC delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Diodes Incorporated for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP + Diode (Isolated)
- Current - Collector (Ic) (Max): 1.25 A
- Voltage - Collector Emitter Breakdown (Max): 12 V
- Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 1.25A
- Current - Collector Cutoff (Max): 10nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
- Power - Max: 885 mW
- Frequency - Transition: 220MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6
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Diodes Incorporated