1N1186R
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE GEN PURP REV 200V 35A DO5
$7.47
Available to order
Reference Price (USD)
300+
$7.89663
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with the 1N1186R single rectifier diode from GeneSiC Semiconductor. This Discrete Semiconductor Product is engineered for precision and efficiency, offering low forward voltage and high surge tolerance. Ideal for rectification in power adapters, welding equipment, and UPS systems, the 1N1186R delivers consistent results under heavy loads. Its applications extend to aerospace and defense systems, where reliability cannot be compromised. GeneSiC Semiconductor's 1N1186R is the go-to choice for engineers seeking robust and high-performing rectifier diodes.
Specifications
- Product Status: Active
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 35A
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 50 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 190°C
Related Products
Vishay General Semiconductor - Diodes Division
AS1PDHM3/84A
Vishay General Semiconductor - Diodes Division
FESB8HTHE3_A/P
Yangzhou Yangjie Electronic Technology Co.,Ltd
S16-F1-0000HF
Panjit International Inc.
ER2A_R1_00001
Microchip Technology
APT30D20SG
Phoenix Contact
2833657
Vishay General Semiconductor - Diodes Division
US1MHE3_A/I
Vishay General Semiconductor - Diodes Division
MBRB1635HE3_B/P
Power Integrations
LXA04T600
GeneSiC Semiconductor