1SS403,H3F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
DIODE GEN PURP 200V 100MA USC
$0.39
Available to order
Reference Price (USD)
3,000+
$0.06210
6,000+
$0.05400
15,000+
$0.04590
30,000+
$0.04320
75,000+
$0.04050
150,000+
$0.03780
Exquisite packaging
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Discover the 1SS403,H3F single rectifier diode by Toshiba Semiconductor and Storage, a key component in the Diodes - Rectifiers - Single classification. This diode excels in providing stable and efficient rectification for circuits requiring precise voltage control. With its high surge current capability and low leakage, it is perfect for use in power management systems, LED drivers, and battery chargers. The 1SS403,H3F is widely utilized in telecommunications, renewable energy systems, and medical devices, ensuring reliable operation under varying load conditions. Choose Toshiba Semiconductor and Storage's 1SS403,H3F for unmatched quality and performance in discrete semiconductor solutions.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 60 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 200 V
- Capacitance @ Vr, F: 3pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: USC
- Operating Temperature - Junction: 125°C (Max)
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