2LS20017E42W34854NOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 1700V 20A
$0.00
Available to order
Reference Price (USD)
1+
$3,655.40000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-generation power control with Infineon Technologies's 2LS20017E42W34854NOSA1 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The 2LS20017E42W34854NOSA1 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the 2LS20017E42W34854NOSA1 in your next-generation HVDC systems or particle accelerator power supplies. Infineon Technologies delivers reliability where it matters most with the 2LS20017E42W34854NOSA1 IGBT module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Vishay General Semiconductor - Diodes Division
VS-GB75YF120UT
Powerex Inc.
QID1210007
Powerex Inc.
CM100TF-24H
Infineon Technologies
FS50R12KT3BOSA1
Microsemi Corporation
APTGF50DA120T1G
onsemi
FMS6G20US60S
Vishay General Semiconductor - Diodes Division
VS-GB600AH120N
Powerex Inc.
CM200RL-24NF
Infineon Technologies
IFS200V12PT4BOSA1
Infineon Technologies