VS-GB600AH120N
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 910A INT-A-PAK
$0.00
Available to order
Reference Price (USD)
12+
$248.98500
Exquisite packaging
Discount
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Discover the power of Vishay General Semiconductor - Diodes Division's VS-GB600AH120N, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The VS-GB600AH120N performs exceptionally well in high-voltage DC transmission and pulsed power applications. With Vishay General Semiconductor - Diodes Division's VS-GB600AH120N, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 910 A
- Power - Max: 3125 W
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 600A (Typ)
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 41 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Double INT-A-PAK (5)
- Supplier Device Package: Double INT-A-PAK
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