2N3765UA/TR
Microchip Technology
Microchip Technology
POWER BJT
$69.33
Available to order
Reference Price (USD)
1+
$69.33000
500+
$68.6367
1000+
$67.9434
1500+
$67.2501
2000+
$66.5568
2500+
$65.8635
Exquisite packaging
Discount
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Upgrade your electronic designs with the 2N3765UA/TR Bipolar Junction Transistor (BJT) by Microchip Technology. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the 2N3765UA/TR is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Microchip Technology for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 5V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, No Lead
- Supplier Device Package: UA
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