2N4123
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN 30V 0.2A TO92
$0.13
Available to order
Reference Price (USD)
7,500+
$0.14235
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2N4123 by NTE Electronics, Inc is a premium Bipolar Junction Transistor (BJT) designed for superior performance in various electronic applications. This single BJT transistor features high current handling and fast switching speeds, making it ideal for power management and control systems. Commonly used in automotive electronics, LED drivers, and power supplies, the 2N4123 ensures efficient and stable operation. Backed by NTE Electronics, Inc's reputation for quality, this transistor is a trusted choice for engineers and designers seeking reliable discrete semiconductor solutions.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200 mA
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
- Power - Max: 350 mW
- Frequency - Transition: 250MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
Related Products
onsemi
DTC114Y
onsemi
2SA1507S
Nexperia USA Inc.
BCX52-16TF
Harris Corporation
HC5523IM
onsemi
TIP41BG
Toshiba Semiconductor and Storage
2SA1312-BL(TE85L,F
Nexperia USA Inc.
BCX70G,215
Diodes Incorporated
MMBT2907A-7-F
onsemi
FJP13009H2TU
onsemi