2N4449U/TR
Microchip Technology
Microchip Technology
SMALL-SIGNAL BJT
$33.39
Available to order
Reference Price (USD)
1+
$33.39000
500+
$33.0561
1000+
$32.7222
1500+
$32.3883
2000+
$32.0544
2500+
$31.7205
Exquisite packaging
Discount
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Optimize your electronic systems with the 2N4449U/TR Bipolar Junction Transistor (BJT) from Microchip Technology. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the 2N4449U/TR delivers superior performance in diverse environments. Microchip Technology's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): 15 V
- Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 400nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
- Power - Max: 600 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, No Lead
- Supplier Device Package: -
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