2N5007
Microchip Technology
Microchip Technology
POWER BJT
$517.28
Available to order
Reference Price (USD)
1+
$517.27500
500+
$512.10225
1000+
$506.9295
1500+
$501.75675
2000+
$496.584
2500+
$491.41125
Exquisite packaging
Discount
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Optimize your electronic systems with the 2N5007 Bipolar Junction Transistor (BJT) from Microchip Technology. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the 2N5007 delivers superior performance in diverse environments. Microchip Technology's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 5mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 100 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Stud Mount
- Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
- Supplier Device Package: TO-61
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