2N5010S
Microchip Technology
Microchip Technology
POWER BJT
$21.06
Available to order
Reference Price (USD)
1+
$21.06000
500+
$20.8494
1000+
$20.6388
1500+
$20.4282
2000+
$20.2176
2500+
$20.007
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2N5010S Bipolar Junction Transistor (BJT) from Microchip Technology is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the 2N5010S is a reliable component for demanding applications. Microchip Technology's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200 mA
- Voltage - Collector Emitter Breakdown (Max): 500 V
- Vce Saturation (Max) @ Ib, Ic: 1.4V @ 5mA, 25mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 10V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
Related Products
Microchip Technology
2N3446
Microchip Technology
2N2986
Microchip Technology
2N6385P
Microchip Technology
BCY-59
Microchip Technology
JANSP2N3637UB/TR
Microchip Technology
2N4449U
Diodes Incorporated
ZTX614QSTZ
Micro Commercial Co
MMS8050-H-TP
Microchip Technology
JANTXV2N3867S
Microchip Technology