2N5115 TO-18 3L
Linear Integrated Systems, Inc.
Linear Integrated Systems, Inc.
P-CHANNEL, SINGLE, JFET SWITCH
$5.25
Available to order
Reference Price (USD)
1+
$5.25000
500+
$5.1975
1000+
$5.145
1500+
$5.0925
2000+
$5.04
2500+
$4.9875
Exquisite packaging
Discount
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Introducing the 2N5115 TO-18 3L from Linear Integrated Systems, Inc.'s premium Discrete Semiconductor Products - a JFET engineered for high-frequency applications. This RF-optimized transistor offers outstanding gain-bandwidth product and minimal feedback capacitance. The advanced epitaxial process ensures tight parameter distribution and excellent yield. Wireless infrastructure equipment manufacturers utilize the 2N5115 TO-18 3L in base station receivers, software-defined radios, and radar systems. Its low intermodulation distortion makes it perfect for multi-carrier cellular systems and satellite transponders. The device also finds use in specialized applications like quantum computing interfaces and terahertz wave detectors, demonstrating its exceptional high-frequency capabilities.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
- Resistance - RDS(On): 100 Ohms
- Power - Max: 500 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18-3
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