2N5179
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 12V 200MHZ TO72
$0.00
Available to order
Reference Price (USD)
1+
$5.82000
10+
$5.19800
25+
$4.67760
100+
$4.26200
250+
$3.84616
500+
$3.45114
1,000+
$2.91060
2,500+
$2.77200
Exquisite packaging
Discount
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Discover the 2N5179, a premium RF Bipolar Junction Transistor (BJT) by Microsemi Corporation, part of the Discrete Semiconductor Products lineup. This transistor is engineered for high-frequency applications, delivering outstanding performance in RF amplification and switching. Its advanced design ensures minimal signal loss and high efficiency, making it perfect for use in mobile communication, broadcast equipment, and satellite systems. The 2N5179 boasts features like high power gain, low intermodulation distortion, and superior thermal management. Whether you're designing RF amplifiers, oscillators, or mixers, this transistor provides the reliability and performance you need. Choose Microsemi Corporation for cutting-edge RF BJT solutions.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 200MHz
- Noise Figure (dB Typ @ f): 4.5dB @ 200MHz
- Gain: 20dB
- Power - Max: 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-206AF, TO-72-4 Metal Can
- Supplier Device Package: TO-72
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