2N5551RL1
onsemi
onsemi
TRANS NPN 160V 0.6A TO92
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience unmatched performance with the 2N5551RL1 Bipolar Junction Transistor (BJT) by onsemi. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the 2N5551RL1 delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose onsemi for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 160 V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Power - Max: 625 mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
- Supplier Device Package: TO-92 (TO-226)
Related Products
Rohm Semiconductor
MMST8598T146
Infineon Technologies
BC80825WE6327HTSA1
NXP USA Inc.
PMBT2222A/LF1215
Infineon Technologies
BC850CWE6327
Toshiba Semiconductor and Storage
2SC2482(FJTN,F,M)
Rohm Semiconductor
2SC4617EBTLS
Diodes Incorporated
FZTA92TA
onsemi
MPSW45AZL1
Panasonic Electronic Components
2SB1462G0L
Micro Commercial Co