2N7002AQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
$0.32
Available to order
Reference Price (USD)
3,000+
$0.05815
6,000+
$0.05112
15,000+
$0.04409
30,000+
$0.04175
75,000+
$0.03941
150,000+
$0.03472
Exquisite packaging
Discount
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Optimize your power electronics with the 2N7002AQ-7 single MOSFET from Diodes Incorporated. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the 2N7002AQ-7 combines cutting-edge technology with Diodes Incorporated's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 5Ohm @ 115mA, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 370mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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