2N7002BKVL
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 60V 350MA TO236AB
$0.27
Available to order
Reference Price (USD)
10,000+
$0.03646
30,000+
$0.03457
50,000+
$0.03268
100,000+
$0.02946
250,000+
$0.02890
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the 2N7002BKVL by Nexperia USA Inc., a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the 2N7002BKVL is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 370mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Toshiba Semiconductor and Storage
TK7P60W5,RVQ
Infineon Technologies
IPI80N06S208AKSA2
IXYS
IXTY4N65X2
onsemi
FDD86250-F085
Vishay Siliconix
SIR466DP-T1-GE3
Vishay Siliconix
SQM120N04-1M7L_GE3
Infineon Technologies
SPP20N60C3XKSA1
Renesas Electronics America Inc
UPA2723UT1A-E1-AY
Infineon Technologies
IPW65R190CFD7AXKSA1
onsemi