2N7636-GA
GeneSiC Semiconductor
GeneSiC Semiconductor
TRANS SJT 650V 4A TO276
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Discover the 2N7636-GA from GeneSiC Semiconductor, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the 2N7636-GA ensures reliable performance in demanding environments. Upgrade your circuit designs with GeneSiC Semiconductor's cutting-edge technology today.
Specifications
- Product Status: Obsolete
- FET Type: -
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (165°C)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 415mOhm @ 4A
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 324 pF @ 35 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 225°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-276
- Package / Case: TO-276AA
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