2SA1971(TE12L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
PB-FREE POWER TRANSISTOR PW-MINI
$0.26
Available to order
Reference Price (USD)
1+
$0.25769
500+
$0.2551131
1000+
$0.2525362
1500+
$0.2499593
2000+
$0.2473824
2500+
$0.2448055
Exquisite packaging
Discount
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Upgrade your electronic designs with the 2SA1971(TE12L,F) Bipolar Junction Transistor (BJT) by Toshiba Semiconductor and Storage. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the 2SA1971(TE12L,F) is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Toshiba Semiconductor and Storage for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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