BC857AQB-QZ
Nexperia USA Inc.
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
$0.04
Available to order
Reference Price (USD)
1+
$0.03922
500+
$0.0388278
1000+
$0.0384356
1500+
$0.0380434
2000+
$0.0376512
2500+
$0.037259
Exquisite packaging
Discount
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Experience unmatched performance with the BC857AQB-QZ Bipolar Junction Transistor (BJT) by Nexperia USA Inc.. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the BC857AQB-QZ delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Nexperia USA Inc. for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
- Power - Max: 340 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1110D-3
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