2SAR567F3TR
Rohm Semiconductor
Rohm Semiconductor
TRANS PNP 120V 2.5A HUML2020L3
$0.53
Available to order
Reference Price (USD)
1+
$0.53250
500+
$0.527175
1000+
$0.52185
1500+
$0.516525
2000+
$0.5112
2500+
$0.505875
Exquisite packaging
Discount
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Discover the 2SAR567F3TR Bipolar Junction Transistor (BJT) from Rohm Semiconductor, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the 2SAR567F3TR is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose Rohm Semiconductor for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2.5 A
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 80mA, 800mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
- Power - Max: 1 W
- Frequency - Transition: 220MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-UDFN Exposed Pad
- Supplier Device Package: HUML2020L3
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