2SC2712-Y,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN 50V 0.15A SMINI
$0.21
Available to order
Reference Price (USD)
3,000+
$0.03749
6,000+
$0.03381
15,000+
$0.02940
30,000+
$0.02646
75,000+
$0.02352
150,000+
$0.01960
Exquisite packaging
Discount
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Upgrade your electronic designs with the 2SC2712-Y,LF Bipolar Junction Transistor (BJT) by Toshiba Semiconductor and Storage. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the 2SC2712-Y,LF is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Toshiba Semiconductor and Storage for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
- Power - Max: 150 mW
- Frequency - Transition: 80MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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