2SC3585-T1B-A
Renesas Electronics America Inc
Renesas Electronics America Inc
NPN TRANSISTOR
$0.33
Available to order
Reference Price (USD)
1+
$0.33000
500+
$0.3267
1000+
$0.3234
1500+
$0.3201
2000+
$0.3168
2500+
$0.3135
Exquisite packaging
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Introducing the 2SC3585-T1B-A, a high-performance RF Bipolar Junction Transistor (BJT) from Renesas Electronics America Inc, designed for the Discrete Semiconductor Products market. This transistor excels in RF amplification, offering high linearity and low phase noise. Its versatile design makes it suitable for a wide range of applications, including cellular base stations, satellite communication, and RF test equipment. The 2SC3585-T1B-A features high power gain, excellent thermal performance, and long-term durability. Whether you're working on consumer electronics or industrial systems, this transistor delivers unmatched performance. Rely on Renesas Electronics America Inc for top-tier RF BJT solutions.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 10GHz
- Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
- Gain: 9dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT23-3 (TO-236)
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