2SC5876T106R
Rohm Semiconductor
Rohm Semiconductor
TRANS NPN 60V 0.5A UMT3
$0.00
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Reference Price (USD)
3,000+
$0.13950
6,000+
$0.13050
15,000+
$0.12600
Exquisite packaging
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Enhance your circuit designs with the 2SC5876T106R Bipolar Junction Transistor (BJT) from Rohm Semiconductor. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The 2SC5876T106R is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Rohm Semiconductor to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
- Power - Max: 200 mW
- Frequency - Transition: 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: UMT3
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