2SD2212T100
Rohm Semiconductor
Rohm Semiconductor
TRANS NPN DARL 60V 2A MPT3
$0.00
Available to order
Reference Price (USD)
1,000+
$0.26560
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2SD2212T100 from Rohm Semiconductor is a high-quality Bipolar Junction Transistor (BJT) designed for precision and durability. This single BJT transistor is perfect for applications requiring fast switching and low power consumption, such as portable electronics and IoT devices. With its compact size and robust construction, the 2SD2212T100 is a reliable choice for both commercial and industrial use. Trust Rohm Semiconductor to provide top-tier discrete semiconductor products that enhance the performance and longevity of your electronic systems.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 2V
- Power - Max: 2 W
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: MPT3
Related Products
Panasonic Electronic Components
2SB0947AP
onsemi
PN2222ARLRP
onsemi
2N5401_D81Z
Toshiba Semiconductor and Storage
2SA1761,T6F(M
onsemi
MJE15032
Panasonic Electronic Components
DSC2A01S0L
onsemi
FJPF5021R
onsemi
KSC2334OTU
Nexperia USA Inc.
BC856BW/ZLF
NXP USA Inc.