2SJ673-AZ
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET P-CH 60V 36A TO220
$1.85
Available to order
Reference Price (USD)
1+
$1.85378
500+
$1.8352422
1000+
$1.8167044
1500+
$1.7981666
2000+
$1.7796288
2500+
$1.761091
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the 2SJ673-AZ from Renesas Electronics America Inc, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the 2SJ673-AZ ensures reliable performance in demanding environments. Upgrade your circuit designs with Renesas Electronics America Inc's cutting-edge technology today.
Specifications
- Product Status: Last Time Buy
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 32W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 Isolated Tab
- Package / Case: TO-220-3 Isolated Tab
Related Products
Toshiba Semiconductor and Storage
SSM3J15CT,L3F
Diodes Incorporated
DMN1004UFDF-13
onsemi
NVTFWS052P04M8LTAG
Transphorm
TP65H050G4WS
Diodes Incorporated
DMT6015LPS-13
Nexperia USA Inc.
PMCM950ENEZ
Infineon Technologies
IPZ40N04S5L3R6ATMA1
Renesas Electronics America Inc
RJK0216DPA-WS#J53
Wolfspeed, Inc.
PC3M0045065L
Wolfspeed, Inc.