E3M0060065K
Wolfspeed, Inc.
Wolfspeed, Inc.
60M 650V SIC AUTOMOTIVE MOSFET
$15.10
Available to order
Reference Price (USD)
1+
$15.10000
500+
$14.949
1000+
$14.798
1500+
$14.647
2000+
$14.496
2500+
$14.345
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the E3M0060065K from Wolfspeed, Inc., a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the E3M0060065K ensures reliable performance in demanding environments. Upgrade your circuit designs with Wolfspeed, Inc.'s cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
- Vgs(th) (Max) @ Id: 3.6V @ 3.6mA
- Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 15 V
- Vgs (Max): +19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 600 V
- FET Feature: -
- Power Dissipation (Max): 131W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
Related Products
Diodes Incorporated
DMN3018SFGQ-7
Vishay Siliconix
SI3456DDV-T1-BE3
Renesas Electronics America Inc
RJK2017DPE-00#J3
Toshiba Semiconductor and Storage
TK4A80E,S4X
Micro Commercial Co
MCB90N12-TP
Micro Commercial Co
MSJU11N65A-TP
Harris Corporation
HUF76121S3
IXYS
MMIX1F160N30T
onsemi
NTMFS4C808NAT3G
Renesas Electronics America Inc