2SK1401A-E
Renesas Electronics America Inc
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
$3.96
Available to order
Reference Price (USD)
1+
$3.96000
500+
$3.9204
1000+
$3.8808
1500+
$3.8412
2000+
$3.8016
2500+
$3.762
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the 2SK1401A-E single MOSFET from Renesas Electronics America Inc. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Renesas Electronics America Inc's 2SK1401A-E for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
Renesas Electronics America Inc
NP15P06SLG-E1-AY
Vishay Siliconix
SI8812DB-T2-E1
Toshiba Semiconductor and Storage
TK90S06N1L,LXHQ
Panjit International Inc.
PJQ5442_R2_00001
Toshiba Semiconductor and Storage
TK2Q60D(Q)
IXYS Integrated Circuits Division
CPC3708CTR
STMicroelectronics
STD12N50DM2
Renesas Electronics America Inc
NP16N06YLL-E1-AY
Vishay Siliconix
IRFR014PBF
onsemi