2SK1958-T1-A
Renesas
Renesas
2SK1958-T1-A - N-CHANNEL MOS FET
$0.06
Available to order
Reference Price (USD)
1+
$0.06209
500+
$0.0614691
1000+
$0.0608482
1500+
$0.0602273
2000+
$0.0596064
2500+
$0.0589855
Exquisite packaging
Discount
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The 2SK1958-T1-A by Renesas is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Renesas for innovation you can depend on.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 16 V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
- Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id: 1.1V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±7V
- Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 3 V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-MMPAK
- Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
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