DMN2005UPS-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 20V 20A POWERDI5060
$0.91
Available to order
Reference Price (USD)
2,500+
$0.43080
5,000+
$0.40440
12,500+
$0.39120
25,000+
$0.38400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMN2005UPS-13 by Diodes Incorporated is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the DMN2005UPS-13 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 5337 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
Related Products
Renesas Electronics America Inc
FS3KM-9A#B00
Renesas Electronics America Inc
2SJ296STL-E
Goford Semiconductor
G26P04D5
Micro Commercial Co
2N7002KL3-TP
Renesas Electronics America Inc
RJK0390DPA-WS#J53
Infineon Technologies
BSF083N03LQG
Infineon Technologies
IAUZ40N10S5L120ATMA1
Infineon Technologies
SPP06N60C3XKSA1
Goford Semiconductor
G1006LE
Diodes Incorporated