2SK2461-AZ
Renesas
Renesas
2SK2461 - SILICON N CHANNEL MOSF
$2.76
Available to order
Reference Price (USD)
1+
$2.75602
500+
$2.7284598
1000+
$2.7008996
1500+
$2.6733394
2000+
$2.6457792
2500+
$2.618219
Exquisite packaging
Discount
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Meet the 2SK2461-AZ by Renesas, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The 2SK2461-AZ stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Renesas.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 80mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 35W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: ITO-220AB
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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