2SK2729-E
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 500V 20A TO3P
$4.77
Available to order
Reference Price (USD)
1+
$4.77000
500+
$4.7223
1000+
$4.6746
1500+
$4.6269
2000+
$4.5792
2500+
$4.5315
Exquisite packaging
Discount
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Upgrade your designs with the 2SK2729-E by Renesas Electronics America Inc, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the 2SK2729-E is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 150W (Ta)
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
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