2SK4150TZ-E
Renesas
Renesas
2SK4150TZ - N-CHANNEL POWER MOSF
$0.58
Available to order
Reference Price (USD)
1+
$0.58374
500+
$0.5779026
1000+
$0.5720652
1500+
$0.5662278
2000+
$0.5603904
2500+
$0.554553
Exquisite packaging
Discount
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Optimize your power electronics with the 2SK4150TZ-E single MOSFET from Renesas. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the 2SK4150TZ-E combines cutting-edge technology with Renesas's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
- Rds On (Max) @ Id, Vgs: 5.7Ohm @ 200mA, 4V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 750mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-92
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
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