STWA75N65DM6
STMicroelectronics
STMicroelectronics
N-CHANNEL 650 V, 33 MOHM TYP., 7
$14.32
Available to order
Reference Price (USD)
1+
$14.32000
500+
$14.1768
1000+
$14.0336
1500+
$13.8904
2000+
$13.7472
2500+
$13.604
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The STWA75N65DM6 by STMicroelectronics is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the STWA75N65DM6 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 36mOhm @ 37.5A, 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 480W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 Long Leads
- Package / Case: TO-247-3
Related Products
Vishay Siliconix
SIR800DP-T1-RE3
Diodes Incorporated
DMTH6016LPS-13
onsemi
NTMFS5C442NLTWFT1G
Diodes Incorporated
DMN1053UCP4-7
Infineon Technologies
BSC886N03LS G
Vishay Siliconix
SIR872ADP-T1-RE3
Fairchild Semiconductor
NDP5060
onsemi
NDCTR3065A
Diodes Incorporated
DMTH61M8SPSQ-13
Diodes Incorporated