4MN10CH-TL-E
onsemi
onsemi
BIP NPN 0.1A 200V
$0.14
Available to order
Reference Price (USD)
1+
$0.14000
500+
$0.1386
1000+
$0.1372
1500+
$0.1358
2000+
$0.1344
2500+
$0.133
Exquisite packaging
Discount
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The 4MN10CH-TL-E RF Bipolar Junction Transistor (BJT) by onsemi is a key component in the Discrete Semiconductor Products range. Optimized for RF applications, this transistor provides high gain and low noise, ensuring superior signal amplification. Its robust design and high-frequency capabilities make it ideal for use in two-way radios, RF amplifiers, and telecommunication infrastructure. With features like excellent thermal stability and low intermodulation distortion, the 4MN10CH-TL-E is a reliable choice for engineers. Applications extend to avionics, automotive radar, and IoT devices. Choose onsemi for advanced RF BJT technology that drives innovation.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 200V
- Frequency - Transition: 400MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 600mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 10V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SC-96
- Supplier Device Package: 3-CPH
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