64010H
Microsemi Corporation
Microsemi Corporation
RF POWER TRANSISTOR
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 64010H by Microsemi Corporation is a state-of-the-art RF Bipolar Junction Transistor (BJT) that stands out in the Discrete Semiconductor Products category. Designed for high-frequency applications, this transistor offers exceptional linearity and low noise, making it ideal for RF amplification. Its compact design and high power handling capability ensure reliable performance in critical applications such as base stations, military communication, and medical devices. Key attributes include high gain bandwidth, excellent thermal resistance, and stable operation under varying conditions. Upgrade your RF circuits with the 64010H from Microsemi Corporation, a leader in semiconductor innovation.
Specifications
- Product Status: Obsolete
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Microsemi Corporation
1000MP
CEL
NE681M03-A
Microsemi Corporation
MS2200
Microsemi Corporation
80273H
Microsemi Corporation
TPR1000A
Infineon Technologies
BFS 469L6 E6327
Infineon Technologies
BFP196WH6327
Microsemi Corporation
1000MA
Microsemi Corporation
MS2311
Microsemi Corporation