A2C25S12M3
STMicroelectronics
STMicroelectronics
IGBT MOD 1200V 25A 197W ACEPACK2
$67.12
Available to order
Reference Price (USD)
1+
$53.19000
18+
$49.62389
108+
$43.08676
Exquisite packaging
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Experience next-generation power control with STMicroelectronics's A2C25S12M3 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The A2C25S12M3 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the A2C25S12M3 in your next-generation HVDC systems or particle accelerator power supplies. STMicroelectronics delivers reliability where it matters most with the A2C25S12M3 IGBT module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 25 A
- Power - Max: 197 W
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 25A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: 1.55 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: ACEPACK™ 2
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