A2T18H410-24SR6
NXP USA Inc.
NXP USA Inc.
IC TRANS RF LDMOS
$0.00
Available to order
Reference Price (USD)
150+
$256.40247
Exquisite packaging
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Meet the A2T18H410-24SR6, a state-of-the-art RF MOSFET transistor from NXP USA Inc., designed for the Discrete Semiconductor Products industry under the Transistors - FETs, MOSFETs - RF subcategory. This component shines in high-frequency environments with its exceptional linearity, low parasitic capacitance, and high power gain. It's the go-to choice for applications such as TV transmitters, satellite receivers, and industrial RF generators. The A2T18H410-24SR6 combines cutting-edge semiconductor technology with NXP USA Inc.'s rigorous quality control to provide a transistor that exceeds expectations in both performance and reliability. Incorporate the A2T18H410-24SR6 into your RF designs for superior signal processing and amplification capabilities.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual)
- Frequency: 1.81GHz
- Gain: 17.4dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 800 mA
- Power - Output: 71W
- Voltage - Rated: 65 V
- Package / Case: NI-1230-4LS2L
- Supplier Device Package: NI-1230-4LS2L
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