A2T20H330W24NR6
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
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Reference Price (USD)
150+
$117.49847
Exquisite packaging
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The A2T20H330W24NR6 is a high-efficiency RF MOSFET transistor by NXP USA Inc., part of the Discrete Semiconductor Products range and categorized under Transistors - FETs, MOSFETs - RF. Designed for optimal RF performance, this transistor features low intermodulation distortion, high power density, and excellent thermal conductivity. It's widely used in professional audio equipment, military jamming systems, and wireless networking devices. The A2T20H330W24NR6's ability to maintain stable operation at high frequencies makes it indispensable for modern RF applications. With NXP USA Inc.'s reputation for quality, you can trust the A2T20H330W24NR6 to deliver consistent, high-performance results in your most demanding RF circuits.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.88GHz ~ 2.025GHz
- Gain: 15.9dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 700 mA
- Power - Output: 229W
- Voltage - Rated: 65 V
- Package / Case: OM-1230-4L2L
- Supplier Device Package: OM-1230-4L2L
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