A2T18S165-12SR3
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
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Reference Price (USD)
250+
$84.91000
Exquisite packaging
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Discover the A2T18S165-12SR3, a cutting-edge RF MOSFET transistor from NXP USA Inc., engineered for the Discrete Semiconductor Products market. This product falls under the Transistors - FETs, MOSFETs - RF classification and boasts superior high-frequency characteristics, including minimal signal loss and outstanding power handling capabilities. Its advanced design ensures optimal performance in critical RF applications. The A2T18S165-12SR3 is particularly suited for use in satellite communication systems, broadcast transmitters, and medical imaging equipment. With features like enhanced linearity and robust ESD protection, this MOSFET is a top choice for engineers designing next-generation RF circuits. NXP USA Inc.'s commitment to quality ensures that the A2T18S165-12SR3 meets the highest industry standards for performance and durability.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.805GHz ~ 1.995GHz
- Gain: 18dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 800 mA
- Power - Output: 148W
- Voltage - Rated: 65 V
- Package / Case: NI-780-2S2L
- Supplier Device Package: NI-780-2S2L
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