A2T18S260-12SR3
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
$0.00
Available to order
Reference Price (USD)
250+
$103.01768
Exquisite packaging
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The A2T18S260-12SR3 by NXP USA Inc. is a top-tier RF MOSFET transistor in the Discrete Semiconductor Products category, specifically designed for Transistors - FETs, MOSFETs - RF applications. This component offers exceptional high-frequency characteristics, including low noise figure, high gain, and excellent phase linearity. It's particularly effective in applications such as drone communication systems, satellite phones, and test measurement equipment. The A2T18S260-12SR3's robust design ensures reliable operation across temperature variations and demanding operating conditions. Trust NXP USA Inc.'s A2T18S260-12SR3 to provide the performance and durability needed for advanced RF systems where precision and reliability are non-negotiable.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.805GHz ~ 1.995GHz
- Gain: 18.9dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 1.4 A
- Power - Output: 257W
- Voltage - Rated: 65 V
- Package / Case: NI-780-2S2L
- Supplier Device Package: NI-780-2S2L
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