A2T18S260W12NR3
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
$0.00
Available to order
Reference Price (USD)
250+
$182.29260
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the A2T18S260W12NR3, a state-of-the-art RF MOSFET transistor from NXP USA Inc., designed for the Discrete Semiconductor Products industry under the Transistors - FETs, MOSFETs - RF subcategory. This component shines in high-frequency environments with its exceptional linearity, low parasitic capacitance, and high power gain. It's the go-to choice for applications such as TV transmitters, satellite receivers, and industrial RF generators. The A2T18S260W12NR3 combines cutting-edge semiconductor technology with NXP USA Inc.'s rigorous quality control to provide a transistor that exceeds expectations in both performance and reliability. Incorporate the A2T18S260W12NR3 into your RF designs for superior signal processing and amplification capabilities.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.805GHz ~ 1.88GHz
- Gain: 18.7dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 1.5 A
- Power - Output: 280W
- Voltage - Rated: 65 V
- Package / Case: OM-880X-2L2L
- Supplier Device Package: OM-880X-2L2L
Related Products
NXP USA Inc.
MRF8S18260HR5
Infineon Technologies
PTFB093608FVV2S250XTMA1
Wolfspeed, Inc.
PTFB210801FA-V1-R0
Infineon Technologies
PTFA192001EV4R0XTMA1
Infineon Technologies
PTRA093302DCV1R0XTMA1
NXP USA Inc.
BLF4G22S-100,112
Infineon Technologies
PTAC260302SCV1XWSA1
Infineon Technologies
PTF240101S V1
Microchip Technology
VRF148AMP
onsemi