AFT21H350W04GSR6
NXP USA Inc.
NXP USA Inc.
FET RF 2CH 65V 2.11GHZ
$0.00
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Reference Price (USD)
150+
$162.80793
Exquisite packaging
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As a leading solution in the Discrete Semiconductor Products market, the AFT21H350W04GSR6 RF MOSFET from NXP USA Inc. (under Transistors - FETs, MOSFETs - RF) sets new standards for high-frequency performance. This transistor features ultra-fast switching, low thermal resistance, and outstanding ruggedness, making it ideal for RF power applications. It's commonly found in weather radar systems, mobile communication base stations, and electronic warfare equipment. The AFT21H350W04GSR6's advanced design ensures maximum power transfer with minimal distortion. With NXP USA Inc.'s expertise in semiconductor innovation, the AFT21H350W04GSR6 provides engineers with a reliable, high-performance component for their most critical RF designs.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.11GHz
- Gain: 16.4dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 750 mA
- Power - Output: 63W
- Voltage - Rated: 65 V
- Package / Case: NI-1230S-4 GW
- Supplier Device Package: NI-1230S-4 GULL
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