A2T21H360-23NR6
NXP USA Inc.
NXP USA Inc.
RF TRANS 2.1GHZ 360W OM1230-4L2S
$418.67
Available to order
Reference Price (USD)
150+
$119.35220
Exquisite packaging
Discount
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Meet the A2T21H360-23NR6, a state-of-the-art RF MOSFET transistor from NXP USA Inc., designed for the Discrete Semiconductor Products industry under the Transistors - FETs, MOSFETs - RF subcategory. This component shines in high-frequency environments with its exceptional linearity, low parasitic capacitance, and high power gain. It's the go-to choice for applications such as TV transmitters, satellite receivers, and industrial RF generators. The A2T21H360-23NR6 combines cutting-edge semiconductor technology with NXP USA Inc.'s rigorous quality control to provide a transistor that exceeds expectations in both performance and reliability. Incorporate the A2T21H360-23NR6 into your RF designs for superior signal processing and amplification capabilities.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual)
- Frequency: 2.11GHz ~ 2.2GHz
- Gain: 16.8dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 500 mA
- Power - Output: 373W
- Voltage - Rated: 65 V
- Package / Case: OM-1230-4L2L
- Supplier Device Package: OM-1230-4L2L
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