MRFE6VP6600GNR3
NXP USA Inc.
NXP USA Inc.
TRANS RF LDMOS 600W 50V
$171.38
Available to order
Reference Price (USD)
250+
$87.13364
Exquisite packaging
Discount
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Meet the MRFE6VP6600GNR3, a state-of-the-art RF MOSFET transistor from NXP USA Inc., designed for the Discrete Semiconductor Products industry under the Transistors - FETs, MOSFETs - RF subcategory. This component shines in high-frequency environments with its exceptional linearity, low parasitic capacitance, and high power gain. It's the go-to choice for applications such as TV transmitters, satellite receivers, and industrial RF generators. The MRFE6VP6600GNR3 combines cutting-edge semiconductor technology with NXP USA Inc.'s rigorous quality control to provide a transistor that exceeds expectations in both performance and reliability. Incorporate the MRFE6VP6600GNR3 into your RF designs for superior signal processing and amplification capabilities.
Specifications
- Product Status: Active
- Transistor Type: LDMOS (Dual)
- Frequency: 230MHz
- Gain: 24.7dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 600W
- Voltage - Rated: 133 V
- Package / Case: OM-780G-4L
- Supplier Device Package: OM-780G-4L
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