A3G18D510-04SR3
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER GAN TRANSISTOR,
$152.62
Available to order
Reference Price (USD)
1+
$152.62000
500+
$151.0938
1000+
$149.5676
1500+
$148.0414
2000+
$146.5152
2500+
$144.989
Exquisite packaging
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Discover the A3G18D510-04SR3, a cutting-edge RF MOSFET transistor from NXP USA Inc., engineered for the Discrete Semiconductor Products market. This product falls under the Transistors - FETs, MOSFETs - RF classification and boasts superior high-frequency characteristics, including minimal signal loss and outstanding power handling capabilities. Its advanced design ensures optimal performance in critical RF applications. The A3G18D510-04SR3 is particularly suited for use in satellite communication systems, broadcast transmitters, and medical imaging equipment. With features like enhanced linearity and robust ESD protection, this MOSFET is a top choice for engineers designing next-generation RF circuits. NXP USA Inc.'s commitment to quality ensures that the A3G18D510-04SR3 meets the highest industry standards for performance and durability.
Specifications
- Product Status: Active
- Transistor Type: -
- Frequency: 1.805GHz ~ 2.2GHz
- Gain: 16dB
- Voltage - Test: 48 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 250 mA
- Power - Output: 56W
- Voltage - Rated: 125 V
- Package / Case: NI-780S-4L
- Supplier Device Package: NI-780S-4L
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