A3I25D080GNR1
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER GAN TRANSISTOR
$40.58
Available to order
Reference Price (USD)
1+
$40.58000
500+
$40.1742
1000+
$39.7684
1500+
$39.3626
2000+
$38.9568
2500+
$38.551
Exquisite packaging
Discount
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The A3I25D080GNR1 by NXP USA Inc. is a top-tier RF MOSFET transistor in the Discrete Semiconductor Products category, specifically designed for Transistors - FETs, MOSFETs - RF applications. This component offers exceptional high-frequency characteristics, including low noise figure, high gain, and excellent phase linearity. It's particularly effective in applications such as drone communication systems, satellite phones, and test measurement equipment. The A3I25D080GNR1's robust design ensures reliable operation across temperature variations and demanding operating conditions. Trust NXP USA Inc.'s A3I25D080GNR1 to provide the performance and durability needed for advanced RF systems where precision and reliability are non-negotiable.
Specifications
- Product Status: Active
- Transistor Type: LDMOS (Dual)
- Frequency: 2.3GHz ~ 2.69GHz
- Gain: 29.2dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 175 mA
- Power - Output: 8.3W
- Voltage - Rated: 65 V
- Package / Case: TO-270-17 Variant, Gull Wing
- Supplier Device Package: TO-270WBG-17
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