BLF6G15L-40BRN,112
NXP USA Inc.
NXP USA Inc.
RF PFET, 2-ELEMENT, L BAND, SILI
$53.78
Available to order
Reference Price (USD)
1+
$53.78000
500+
$53.2422
1000+
$52.7044
1500+
$52.1666
2000+
$51.6288
2500+
$51.091
Exquisite packaging
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The BLF6G15L-40BRN,112 is a high-efficiency RF MOSFET transistor by NXP USA Inc., part of the Discrete Semiconductor Products range and categorized under Transistors - FETs, MOSFETs - RF. Designed for optimal RF performance, this transistor features low intermodulation distortion, high power density, and excellent thermal conductivity. It's widely used in professional audio equipment, military jamming systems, and wireless networking devices. The BLF6G15L-40BRN,112's ability to maintain stable operation at high frequencies makes it indispensable for modern RF applications. With NXP USA Inc.'s reputation for quality, you can trust the BLF6G15L-40BRN,112 to deliver consistent, high-performance results in your most demanding RF circuits.
Specifications
- Product Status: Active
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 1.47GHz ~ 1.51GHz
- Gain: 22dB
- Voltage - Test: 28 V
- Current Rating (Amps): 11A
- Noise Figure: -
- Current - Test: 330 mA
- Power - Output: 2.5W
- Voltage - Rated: 65 V
- Package / Case: SOT-1112A
- Supplier Device Package: CDFM6
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