A3I35D025NR1
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER GAN TRANSISTOR
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The A3I35D025NR1 RF MOSFET transistor by NXP USA Inc. is a high-reliability component in the Discrete Semiconductor Products sector, specifically within Transistors - FETs, MOSFETs - RF. This transistor is optimized for high-frequency operation, offering low insertion loss, high efficiency, and excellent impedance matching. Its versatile design makes it suitable for a wide range of applications, including marine communication systems, avionics, and scientific instrumentation. The A3I35D025NR1 stands out for its ability to handle high power levels while maintaining signal integrity. When you choose NXP USA Inc.'s A3I35D025NR1, you're selecting a transistor that delivers consistent performance in the most challenging RF environments.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 3.2GHz ~ 4GHz
- Gain: 27.8dB
- Voltage - Test: -
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: -
- Power - Output: 3.4W
- Voltage - Rated: 28 V
- Package / Case: TO-270-17 Variant, Flat Leads
- Supplier Device Package: TO-270WB-17
Related Products
Freescale Semiconductor
MRF7S16150HSR5
Wolfspeed, Inc.
PTFB212503EL-V1-R250
Ampleon USA Inc.
BLF7G20LS-90PH
Ampleon USA Inc.
BLC10G22LS-240PVT
NXP USA Inc.
MRF21045LSR3
NXP USA Inc.
MRFG35003M6T1
STMicroelectronics
STAC0912-250
MACOM Technology Solutions
MAGX-000245-014000
onsemi
EC4403C-TL
Freescale Semiconductor