MRFG35003M6T1
NXP USA Inc.
NXP USA Inc.
FET RF 8V 3.55GHZ 1.5-PLD
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MRFG35003M6T1 by NXP USA Inc. is a premium RF MOSFET transistor belonging to the Discrete Semiconductor Products family, specifically the Transistors - FETs, MOSFETs - RF segment. This component excels in high-frequency applications with its low gate charge, high breakdown voltage, and excellent thermal management. Ideal for RF power amplification, the MRFG35003M6T1 is frequently utilized in amateur radio equipment, cellular infrastructure, and aerospace communication systems. Its reliable performance under extreme conditions makes it a favorite among design engineers. Whether you're developing IoT devices or advanced military communication tools, NXP USA Inc.'s MRFG35003M6T1 delivers unmatched efficiency and signal integrity for your RF designs.
Specifications
- Product Status: Obsolete
- Transistor Type: pHEMT FET
- Frequency: 3.55GHz
- Gain: 9dB
- Voltage - Test: 6 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 180 mA
- Power - Output: 3W
- Voltage - Rated: 8 V
- Package / Case: PLD-1.5
- Supplier Device Package: PLD-1.5
Related Products
STMicroelectronics
STAC0912-250
MACOM Technology Solutions
MAGX-000245-014000
onsemi
EC4403C-TL
Freescale Semiconductor
MRF6V3090NBR1
Broadcom Limited
ATF-521P8-TR2
NXP USA Inc.
MRF21085LSR5
Infineon Technologies
PTFB260605ELV1R250XTMA1
Renesas Electronics America Inc
NE5550979A-T1-A
NXP USA Inc.
MRF24300GNR3
Wolfspeed, Inc.