AFGHL25T120RHD
onsemi
onsemi
1200V/25A FSII IGBT TO247 AUTOMO
$6.30
Available to order
Reference Price (USD)
1+
$6.30058
500+
$6.2375742
1000+
$6.1745684
1500+
$6.1115626
2000+
$6.0485568
2500+
$5.985551
Exquisite packaging
Discount
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Optimize your power systems with the AFGHL25T120RHD Single IGBT transistor from onsemi. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the AFGHL25T120RHD delivers consistent and reliable operation. Trust onsemi's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 48 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
- Power - Max: 261 W
- Switching Energy: 1.94mJ (on), 770µJ (off)
- Input Type: Standard
- Gate Charge: 189 nC
- Td (on/off) @ 25°C: 27ns/118ns
- Test Condition: 600V, 25A, 5Ohm, 15V
- Reverse Recovery Time (trr): 159 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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