AFGHL30T65RQDN
onsemi
onsemi
650V/30A FS4 SCR IGBT T0247-3L A
$3.10
Available to order
Reference Price (USD)
1+
$3.10218
500+
$3.0711582
1000+
$3.0401364
1500+
$3.0091146
2000+
$2.9780928
2500+
$2.947071
Exquisite packaging
Discount
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Discover the AFGHL30T65RQDN Single IGBT transistor by onsemi, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the AFGHL30T65RQDN ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the AFGHL30T65RQDN for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 42 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 30A
- Power - Max: 230.8 W
- Switching Energy: 340µJ (on), 320µJ (off)
- Input Type: Standard
- Gate Charge: 37 nC
- Td (on/off) @ 25°C: 18ns/68ns
- Test Condition: 400V, 15A, 2.5Ohm, 15V
- Reverse Recovery Time (trr): 39 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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